savantic semiconductor product specification silicon npn power transistors 2SD1391 d escription with to-3pn package high speed switching high voltage,high reliability wide area of safe operation applications for horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 6 v i c collector current (dc) 5 a i cm collector current (pulse) 17 a p c collector power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD1391 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma; i b =0 700 v v (br)ebo emitter-base breakdown voltage i e =1ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =4.5a; i b =2a 2.0 v v besat base-emitter saturation voltage i c =4.5a; i b =2a 1.3 v v cb =750v; i e =0 50 a i cbo collector cut-off current v cb =1500v; i e =0 1.0 ma h fe dc current gain i c =3a ; v ce =10v 4 15 t f fall time 1.0 s t s storage time i c =4a i b end =1.5a,l b =10h 11 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD1391 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm)
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